Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS

Therese Forsberg; Johan Wernehag; Anders Nejdel; Henrik Sjöland; Markus Törmänen

doi:10.1109/LMWC.2017.2690845

Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS

Therese Forsberg, Johan Wernehag, Anders Nejdel, Henrik Sjöland, Markus Törmänen

Mellanox Technologies Ltd

Research output: Contribution to journal › Letter › peer-review

Abstract

Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is
90μm×180μm and the standard VCO has an area of 80μm×110μm.

Original language	English
Pages (from-to)	509-511
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2017.2690845
Publication status	Published - 2017 Apr 19

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

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10.1109/LMWC.2017.2690845

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title = "Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS",

abstract = "Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is 90μm×180μm and the standard VCO has an area of 80μm×110μm.",

author = "Therese Forsberg and Johan Wernehag and Anders Nejdel and Henrik Sj{\"o}land and Markus T{\"o}rm{\"a}nen",

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language = "English",

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journal = "IEEE Microwave and Wireless Components Letters",

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T1 - Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS

AU - Forsberg, Therese

AU - Wernehag, Johan

AU - Nejdel, Anders

AU - Sjöland, Henrik

AU - Törmänen, Markus

PY - 2017/4/19

Y1 - 2017/4/19

N2 - Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is 90μm×180μm and the standard VCO has an area of 80μm×110μm.

AB - Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is 90μm×180μm and the standard VCO has an area of 80μm×110μm.

UR - https://www.scopus.com/pages/publications/85018630714

U2 - 10.1109/LMWC.2017.2690845

DO - 10.1109/LMWC.2017.2690845

M3 - Letter

SN - 1531-1309

VL - 27

SP - 509

EP - 511

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 5

ER -

Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS

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