Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS

Therese Forsberg; Johan Wernehag; Henrik Sjöland; Markus Törmänen

doi:10.23919/APMC.2018.8617232

Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS

Therese Forsberg, Johan Wernehag, Henrik Sjöland, Markus Törmänen

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a -119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a -111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -186.2 dB. Their active areas are 0.03 mm 2 and 0.096 mm 2 respectively.

Original language	English
Title of host publication	Proceedings of 2018 Asia-Pacific Microwave Conference
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	1130-1132
Number of pages	3
ISBN (Electronic)	978-4-9023-3945-1
ISBN (Print)	978-1-5386-2184-4
DOIs	https://doi.org/10.23919/APMC.2018.8617232
Publication status	Published - 2018 Nov 9
Event	2018 Asia-Pacific Microwave Conference - Kyoto, Japan Duration: 2018 Nov 6 → 2018 Nov 9

Conference

Conference	2018 Asia-Pacific Microwave Conference
Abbreviated title	APMC2018
Country/Territory	Japan
City	Kyoto
Period	2018/11/06 → 2018/11/09

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

Access to Document

10.23919/APMC.2018.8617232

Cite this

@inproceedings{0345af347c9e440699dfb31b04fa3831,

title = "Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS",

abstract = "Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8\% tuning rage centered at 30.3 GHz, and the second has a 8.9 \% tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a -119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a -111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -186.2 dB. Their active areas are 0.03 mm 2 and 0.096 mm 2 respectively.",

author = "Therese Forsberg and Johan Wernehag and Henrik Sj{\"o}land and Markus T{\"o}rm{\"a}nen",

year = "2018",

month = nov,

day = "9",

doi = "10.23919/APMC.2018.8617232",

language = "English",

isbn = "978-1-5386-2184-4",

pages = "1130--1132",

booktitle = "Proceedings of 2018 Asia-Pacific Microwave Conference",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2018 Asia-Pacific Microwave Conference ; Conference date: 06-11-2018 Through 09-11-2018",

}

Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS. / Forsberg, Therese; Wernehag, Johan; Sjöland, Henrik et al.
Proceedings of 2018 Asia-Pacific Microwave Conference. IEEE - Institute of Electrical and Electronics Engineers Inc., 2018. p. 1130-1132.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS

AU - Forsberg, Therese

AU - Wernehag, Johan

AU - Sjöland, Henrik

AU - Törmänen, Markus

PY - 2018/11/9

Y1 - 2018/11/9

N2 - Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a -119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a -111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -186.2 dB. Their active areas are 0.03 mm 2 and 0.096 mm 2 respectively.

AB - Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a -119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a -111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -186.2 dB. Their active areas are 0.03 mm 2 and 0.096 mm 2 respectively.

UR - https://www.scopus.com/pages/publications/85061819923

U2 - 10.23919/APMC.2018.8617232

DO - 10.23919/APMC.2018.8617232

M3 - Paper in conference proceeding

SN - 978-1-5386-2184-4

SP - 1130

EP - 1132

BT - Proceedings of 2018 Asia-Pacific Microwave Conference

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 Asia-Pacific Microwave Conference

Y2 - 6 November 2018 through 9 November 2018

ER -

Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS

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Efficient mm-Wave Transmitter Design in CMOS Technology

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Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS

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Efficient mm-Wave Transmitter Design in CMOS Technology

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