Abstract
We present an agile optically controlled switch or modulator of terahertz (THz) radiation. The element is based on a one-dimensional photonic crystal with a GaAs wafer inserted in the middle as a defect layer. The THz electric field is enhanced in the photonic structure at the surfaces of the Ga-As wafer. Excitation of the front GaAs surface by ultrashort 8 10 nm laser pulses then leads to an efficient modulation of the THz beam even at low photocarrier concentrations (approximate to 10(16) cm(-3)). The response time of the element to pulsed photoexcitation is about 130 ps. (c) 2007 Optical Society of America.
| Original language | English |
|---|---|
| Pages (from-to) | 680-682 |
| Journal | Optics Letters |
| Volume | 32 |
| Issue number | 6 |
| Publication status | Published - 2007 |
Bibliographical note
The information about affiliations in this record was updated in December 2015.The record was previously connected to the following departments: Chemical Physics (S) (011001060)
Subject classification (UKÄ)
- Atom and Molecular Physics and Optics