Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

P. Laukkanen; M. P. J. Punkkinen; J. Lang; M. Tuominen; M. Kuzmin; V. Tuominen; J. Dahl; Johan Adell; Janusz Sadowski; J. Kanski; V. Polojarvi; J. Pakarinen; K. Kokko; M. Guina; M. Pessa; I. J. Vayrynen

doi:10.1063/1.3596702

Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

P. Laukkanen, M. P. J. Punkkinen, J. Lang, M. Tuominen, M. Kuzmin, V. Tuominen, J. Dahl, Johan Adell, Janusz Sadowski, J. Kanski, V. Polojarvi, J. Pakarinen, K. Kokko, M. Guina, M. Pessa, I. J. Vayrynen

MAX IV Laboratory

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Abstract

Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]

Original language	English
Article number	231908
Journal	Applied Physics Letters
Volume	98
Issue number	23
DOIs	https://doi.org/10.1063/1.3596702
Publication status	Published - 2011

Subject classification (UKÄ)

Natural Sciences
Physical Sciences

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Laukkanen, P., Punkkinen, M. P. J., Lang, J., Tuominen, M., Kuzmin, M., Tuominen, V., Dahl, J., Adell, J., Sadowski, J., Kanski, J., Polojarvi, V., Pakarinen, J., Kokko, K., Guina, M., Pessa, M., & Vayrynen, I. J. (2011). Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides. Applied Physics Letters, 98(23), Article 231908. https://doi.org/10.1063/1.3596702

@article{84a48b851d8540e18c52cc737544e058,

title = "Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides",

abstract = "Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]",

author = "P. Laukkanen and Punkkinen, {M. P. J.} and J. Lang and M. Tuominen and M. Kuzmin and V. Tuominen and J. Dahl and Johan Adell and Janusz Sadowski and J. Kanski and V. Polojarvi and J. Pakarinen and K. Kokko and M. Guina and M. Pessa and Vayrynen, {I. J.}",

year = "2011",

doi = "10.1063/1.3596702",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "23",

}

Laukkanen, P, Punkkinen, MPJ, Lang, J, Tuominen, M, Kuzmin, M, Tuominen, V, Dahl, J, Adell, J, Sadowski, J, Kanski, J, Polojarvi, V, Pakarinen, J, Kokko, K, Guina, M, Pessa, M & Vayrynen, IJ 2011, 'Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides', Applied Physics Letters, vol. 98, no. 23, 231908. https://doi.org/10.1063/1.3596702

TY - JOUR

T1 - Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

AU - Laukkanen, P.

AU - Punkkinen, M. P. J.

AU - Lang, J.

AU - Tuominen, M.

AU - Kuzmin, M.

AU - Tuominen, V.

AU - Dahl, J.

AU - Adell, Johan

AU - Sadowski, Janusz

AU - Kanski, J.

AU - Polojarvi, V.

AU - Pakarinen, J.

AU - Kokko, K.

AU - Guina, M.

AU - Pessa, M.

AU - Vayrynen, I. J.

PY - 2011

Y1 - 2011

N2 - Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]

AB - Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596702]

U2 - 10.1063/1.3596702

DO - 10.1063/1.3596702

M3 - Article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231908

ER -

Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

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