Variation of strain in granular GaAs:MnAs layers

J. Bak-Misiuk; P. Romanowski; E. Dynowska; Janusz Sadowski; A. Misiuk; W. Caliebe

doi:10.1134/S1063774513070043

Variation of strain in granular GaAs:MnAs layers

J. Bak-Misiuk, P. Romanowski, E. Dynowska, Janusz Sadowski, A. Misiuk, W. Caliebe

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500A degrees C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.

Original language	English
Pages (from-to)	998-1001
Journal	Crystallography Reports
Volume	58
Issue number	7
DOIs	https://doi.org/10.1134/S1063774513070043
Publication status	Published - 2013

Subject classification (UKÄ)

Natural Sciences
Physical Sciences

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10.1134/S1063774513070043

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title = "Variation of strain in granular GaAs:MnAs layers",

abstract = "Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500A degrees C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.",

author = "J. Bak-Misiuk and P. Romanowski and E. Dynowska and Janusz Sadowski and A. Misiuk and W. Caliebe",

year = "2013",

doi = "10.1134/S1063774513070043",

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pages = "998--1001",

journal = "Crystallography Reports",

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T1 - Variation of strain in granular GaAs:MnAs layers

AU - Bak-Misiuk, J.

AU - Romanowski, P.

AU - Dynowska, E.

AU - Sadowski, Janusz

AU - Misiuk, A.

AU - Caliebe, W.

PY - 2013

Y1 - 2013

N2 - Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500A degrees C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.

AB - Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500A degrees C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.

U2 - 10.1134/S1063774513070043

DO - 10.1134/S1063774513070043

M3 - Article

SN - 1063-7745

VL - 58

SP - 998

EP - 1001

JO - Crystallography Reports

JF - Crystallography Reports

IS - 7

ER -

Variation of strain in granular GaAs:MnAs layers

Abstract

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