Vertical high mobility wrap-gated InAs nanowire transistor

Tomas Bryllert, Lars Samuelson, L Jensen, Lars-Erik Wernersson

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

13 Citations (SciVal)


We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm<sup>2</sup>/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of V<sub>g</sub> = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude
Original languageEnglish
Title of host publication63rd Device Research Conference Digest, 2005. DRC '05
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)0-7803-9040-7
Publication statusPublished - 2005
EventDevice Research Conference, 2005 - Santa Barbara, CA, United States
Duration: 2005 Jun 202005 Jun 22


ConferenceDevice Research Conference, 2005
Country/TerritoryUnited States
CitySanta Barbara, CA

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics


  • wrap gated field effect transistor
  • transconductance
  • current saturation
  • sub threshold characteristics
  • InAs
  • -0.15 V
  • high mobility
  • nanowire transistor


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