Vertical III-V Nanowire Transistors for Low-Power Electronics

Engineering

• Tunnel Construction 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Transistor 100%
• Field-Effect Transistor 100%
• Alignment 66%
• Heterojunctions 66%
• Performance 33%
• Optimization 33%
• Fabrication 33%
• Limitations 33%
• Temperature 33%
• Electronics 33%
• Tunnels 33%
• Core-Shell 33%
• Dopants 33%
• Shell Nanowires 33%
• Energy Dissipation 33%
• Subthreshold Slope 33%
• Operating Voltage 33%
• Oxide Thickness 33%
• Electrical Performance 33%
• Operating Temperature 33%
• Carrier Mobility 33%
• Cryogenic Temperature 33%

Material Science

• Nanowire 100%
• Transistor 100%
• Temperature 75%
• Field Effect Transistor 75%
• Devices 50%
• Heterojunction 50%
• Characterization 25%
• Oxide Compound 25%
• Doping (Additives) 25%
• Carrier Mobility 25%
• Type Metal 25%
• Device Fabrication 25%