Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V

Karl-Magnus Persson; Martin Berg; Mattias Borg; Jun Wu; Henrik Sjöland; Erik Lind; Lars-Erik Wernersson

doi:10.1109/DRC.2012.6256966

Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V

Karl-Magnus Persson, Martin Berg, Mattias Borg, Jun Wu, Henrik Sjöland, Erik Lind, Lars-Erik Wernersson

Research output: Contribution to journal › Published meeting abstract › peer-review

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Original language	English
Pages (from-to)	195-196
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/DRC.2012.6256966
Publication status	Published - 2012
Event	Device Research Conference (DRC), 2012 70th Annual - University Park, PA, United States Duration: 2012 Jun 18 → …

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

Nanowire
Transistor
FET
MOSFET
InAs

Access to Document

10.1109/DRC.2012.6256966

DRC12_Abstract_-_KMP_et_al

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6256966

Cite this

@article{71f2b9e775be4d61ac8752e06e7a18d4,

title = "Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V",

keywords = "Nanowire, Transistor, FET, MOSFET, InAs",

author = "Karl-Magnus Persson and Martin Berg and Mattias Borg and Jun Wu and Henrik Sj{\"o}land and Erik Lind and Lars-Erik Wernersson",

year = "2012",

doi = "10.1109/DRC.2012.6256966",

language = "English",

pages = "195--196",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

note = "Device Research Conference (DRC), 2012 70th Annual ; Conference date: 18-06-2012",

}

TY - JOUR

T1 - Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V

AU - Persson, Karl-Magnus

AU - Berg, Martin

AU - Borg, Mattias

AU - Wu, Jun

AU - Sjöland, Henrik

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2012

Y1 - 2012

KW - Nanowire

KW - Transistor

KW - FET

KW - MOSFET

KW - InAs

U2 - 10.1109/DRC.2012.6256966

DO - 10.1109/DRC.2012.6256966

M3 - Published meeting abstract

SN - 0741-3106

SP - 195

EP - 196

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

T2 - Device Research Conference (DRC), 2012 70th Annual

Y2 - 18 June 2012

ER -