Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

Material Science

• Nanowire 100%
• Transistor 100%
• Metal 66%
• Particle 33%
• Temperature 33%
• Devices 33%
• Bending 33%
• Dielectric Material 33%
• Activation Energy 33%
• Field Effect Transistor 33%
• Band Offset 33%

Engineering

• Si Substrate 100%
• Characteristics 66%
• Enhancement 66%
• Alignment 33%
• Temperature 33%
• Field-Effect Transistor 33%
• Gate Dielectric 33%
• Band Bending 33%
• Si Interface 33%
• Conduction Band 33%

Earth and Planetary Sciences

• Substrate 100%
• Nanowire 100%
• Metal 50%
• Report 25%
• Output 25%
• Seed 25%
• Alignment 25%