Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

Mikael Egard, Sofia Johansson, Anne-Charlotte Johansson, Karl-Magnus Persson, Anil Dey, Mattias Borg, Claes Thelander, Lars-Erik Wernersson, Erik Lind

Research output: Contribution to journalArticlepeer-review

Abstract

In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.
Original languageEnglish
Pages (from-to)809-812
JournalNano Letters
Volume10
Issue number3
DOIs
Publication statusPublished - 2010

Subject classification (UKÄ)

  • Nano Technology

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