Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

E. Memisevic; J. Svensson; M. Hellenbrand; E. Lind; L. E. Wernersson

doi:10.1109/IEDM.2016.7838450

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V

E. Memisevic, J. Svensson, M. Hellenbrand, E. Lind, L. E. Wernersson

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

404 Downloads (Pure)

Abstract

We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for V_ds = 0.1-0.5 V and achieves an I_on = 10.6 μA/μm for I_off = 1 nA/μm at V_ds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at V_ds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for V_ds between 0.1 and 0.3 V.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	19.1.1-19.1.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838450
Publication status	Published - 2017 Jan 31
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 2016 Dec 3 → 2016 Dec 7

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	2016/12/03 → 2016/12/07

Subject classification (UKÄ)

Nano-technology
Electrical Engineering, Electronic Engineering, Information Engineering

Access to Document

10.1109/IEDM.2016.7838450

Vertical InAs-GaAsSb-GaSb TFET on Si LUAccepted author manuscript, 2.43 MB

Cite this

Memisevic, E., Svensson, J., Hellenbrand, M., Lind, E., & Wernersson, L. E. (2017). Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 19.1.1-19.1.4). Article 7838450 IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838450

@inproceedings{4154bbb474ec4d4d9aaf3344579b90dc,

title = "Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V",

abstract = "We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.",

author = "E. Memisevic and J. Svensson and M. Hellenbrand and E. Lind and Wernersson, \{L. E.\}",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838450",

language = "English",

pages = "19.1.1--19.1.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

}

Memisevic, E, Svensson, J, Hellenbrand, M, Lind, E & Wernersson, LE 2017, Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838450, IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 19.1.1-19.1.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 2016/12/03. https://doi.org/10.1109/IEDM.2016.7838450

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V. / Memisevic, E.; Svensson, J.; Hellenbrand, M. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. IEEE - Institute of Electrical and Electronics Engineers Inc., 2017. p. 19.1.1-19.1.4 7838450.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

AU - Memisevic, E.

AU - Svensson, J.

AU - Hellenbrand, M.

AU - Lind, E.

AU - Wernersson, L. E.

PY - 2017/1/31

Y1 - 2017/1/31

N2 - We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.

AB - We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.

UR - https://www.scopus.com/pages/publications/85014496860

U2 - 10.1109/IEDM.2016.7838450

DO - 10.1109/IEDM.2016.7838450

M3 - Paper in conference proceeding

AN - SCOPUS:85014496860

SP - 19.1.1-19.1.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Memisevic E, Svensson J, Hellenbrand M, Lind E , Wernersson LE. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. IEEE - Institute of Electrical and Electronics Engineers Inc. 2017. p. 19.1.1-19.1.4. 7838450 doi: 10.1109/IEDM.2016.7838450

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V

Abstract

Conference

Subject classification (UKÄ)

Access to Document

Other files and links

Fingerprint

Vertical III-V Nanowire Tunnel Field-Effect Transistor

Cite this