Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

A. Kovacs; Janusz Sadowski; T. Kasama; J. Domagala; R. Mathieu; T. Dietl; R. E. Dunin-Borkowski

doi:10.1063/1.3581108

Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

A. Kovacs, Janusz Sadowski, T. Kasama, J. Domagala, R. Mathieu, T. Dietl, R. E. Dunin-Borkowski

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga(0.995)Mn(0.005)As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals.

Original language	English
Pages (from-to)	083546-1-083546-5
Journal	Applied Physics Reviews
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.3581108
Publication status	Published - 2011

Subject classification (UKÄ)

Physical Sciences
Natural Sciences

Free keywords

molecular beam epitaxial growth
transmission electron microscopy
nanostructured materials
magnetic semiconductors

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10.1063/1.3581108

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title = "Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy",

abstract = "Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga(0.995)Mn(0.005)As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals.",

keywords = "molecular beam epitaxial growth, transmission electron microscopy, nanostructured materials, magnetic semiconductors",

author = "A. Kovacs and Janusz Sadowski and T. Kasama and J. Domagala and R. Mathieu and T. Dietl and Dunin-Borkowski, {R. E.}",

year = "2011",

doi = "10.1063/1.3581108",

language = "English",

volume = "109",

pages = "083546--1--083546--5",

journal = "Applied Physics Reviews",

issn = "1931-9401",

publisher = "American Institute of Physics (AIP)",

number = "8",

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TY - JOUR

T1 - Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

AU - Kovacs, A.

AU - Sadowski, Janusz

AU - Kasama, T.

AU - Domagala, J.

AU - Mathieu, R.

AU - Dietl, T.

AU - Dunin-Borkowski, R. E.

PY - 2011

Y1 - 2011

N2 - Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga(0.995)Mn(0.005)As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals.

AB - Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga(0.995)Mn(0.005)As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals.

KW - molecular beam epitaxial growth

KW - transmission electron microscopy

KW - nanostructured materials

KW - magnetic semiconductors

U2 - 10.1063/1.3581108

DO - 10.1063/1.3581108

M3 - Article

SN - 1931-9401

VL - 109

SP - 083546-1-083546-5

JO - Applied Physics Reviews

JF - Applied Physics Reviews

IS - 8

ER -

Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

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