Wrap-gated InAs nanowire field-effect transistor

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8 Citations (SciVal)

Abstract

Field-effect transistors (FETs) based on semiconductor nanowires (Bryllert et al., 2005) have the potential to improve certain aspects of existing planar FET technologies. The possibility to form wrap-gates gives an efficient gate coupling resulting in reduced drain-induced barrier lowering. Furthermore, lateral strain relaxation allows a new freedom in combining materials in heterostructures, where materials with different lattice constants can be combined without defects (Bjork et al., 2002). Since the transistor channel, unlike the planar FETs, is vertical, heterostructures may be used to tailor the bandstructure along the direction of current flow. In this paper, we demonstrate a new technology to fabricate vertical nanowire FETs in a process that almost exclusively relies on optical lithography and standard III-V processing techniques. We measure encouraging electrical data, including current saturation at V<sub>ds</sub> ≡ 0.15 V (for V<sub>g</sub> ≡ 0 V) and low voltage operation V<sub>th</sub> ≡ -0.15 V, and present opportunities to improve the device performance by heterostructure design
Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 2005
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Pages273-276
Number of pages4
ISBN (Print)0-7803-9268-X
DOIs
Publication statusPublished - 2005
EventInternational Electron Devices Meeting 2005 - Washington, DC, United States
Duration: 2005 Dec 52005 Dec 7

Conference

ConferenceInternational Electron Devices Meeting 2005
Country/TerritoryUnited States
CityWashington, DC
Period2005/12/052005/12/07

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • optical lithography
  • lattice constants
  • 0.15 V
  • InAs
  • heterostructures design
  • lateral strain relaxation
  • drain induced barrier lowering
  • gate coupling
  • semiconductor nanowires
  • wrap gated nanowire
  • field effect transistor

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