AIP Advances, 2158-3226

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  1. 2018
  2. InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition

    Troian, A., Knutsson, J. V., Sarah R. McKibbin, Yngman, S., Babadi, A. S., Lars Erik Wernersson, Anders Mikkelsen & Rainer Timm, 2018 Dec 1, In : AIP Advances. 8, 12, 125227.

    Research output: Contribution to journalArticle

  3. 2016
  4. k.p theory of freestanding narrow band gap semiconductor nanowires

    Luo, N., Liao, G. & H. Q. Xu, 2016 Dec 1, In : AIP Advances. 6, 12, 125109.

    Research output: Contribution to journalArticle

  5. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    Li, K., Xing, Y. & H. Q. Xu, 2016 Jun 1, In : AIP Advances. 6, 6, 065311.

    Research output: Contribution to journalArticle

  6. Superlattice gain in positive differential conductivity region

    David O. Winge, Franckié, M. & Andreas Wacker, 2016 Apr 1, In : AIP Advances. 6, 4, 045025.

    Research output: Contribution to journalArticle

  7. 2014
  8. High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

    Wang, C. H., Doornbos, G., Astromskas, G., Vellianitis, G., Oxland, R., Holland, M. C., Huang, M. L., Lin, C. H., Hsieh, C. H., Chang, Y. S., Lee, T. L., Chen, Y. Y., Ramvall, P., Erik Lind, Hsu, W. C., Lars-Erik Wernersson, Droopad, R., Passlack, M. & Diaz, C. H., 2014, In : AIP Advances. 4, 4, 047108.

    Research output: Contribution to journalArticle

  9. 2013
  10. Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

    Persson, O., Erik Lind, Edvin Lundgren, Rubio-Zuazo, J., Castro, G. R., Lars-Erik Wernersson, Anders Mikkelsen & Rainer Timm, 2013, In : AIP Advances. 3, 7, 072131.

    Research output: Contribution to journalArticle