IEEE Transactions on Electron Devices, 0018-9383

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  1. 2020
  2. 2017
  3. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Nov, In : IEEE Transactions on Electron Devices. 64, 11, p. 4746-4751

    Research output: Contribution to journalArticle

  4. 2016
  5. Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1: Experimental Devices

    Kirsten Emilie Moselund, Davide Cutaia, Heinz Schmid, Mattias Borg, Saurabh Sant, Andreas Schenk & Heike Riel, 2016 Nov 1, In : IEEE Transactions on Electron Devices. 63, 11, p. 4233-4239 7 p., 7581026.

    Research output: Contribution to journalArticle

  6. Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2: Simulation Study of the Impact of Interface Traps

    Saurabh Sant, Kirsten E. Moselund, Davide Cutaia, Heinz Schmid, Mattias Borg, Heike Riel & Andreas Schenk, 2016 Nov 1, In : IEEE Transactions on Electron Devices. 63, 11, p. 4240-4247 8 p., 7582481.

    Research output: Contribution to journalArticle

  7. Amplifier Design Using Vertical InAs Nanowire MOSFETs

    Kristofer Jansson, Erik Lind & Lars Erik Wernersson, 2016 Jun 1, In : IEEE Transactions on Electron Devices. 63, 6, p. 2353-2359 7 p., 7465782.

    Research output: Contribution to journalArticle

  8. RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors

    Jun Wu, Kristofer Jansson, Aein Shiri Babadi, Martin Berg, Erik Lind & Lars-Erik Wernersson, 2016, In : IEEE Transactions on Electron Devices. 63, 2, p. 584-589

    Research output: Contribution to journalArticle

  9. 2015
  10. InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

    Jiongjiong Mo, Erik Lind & Lars-Erik Wernersson, 2015, In : IEEE Transactions on Electron Devices. 62, 2, p. 501-506

    Research output: Contribution to journalArticle

  11. Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%

    Andrey Yu. Baikov, Chiara Marrelli & Igor Syratchev, 2015, In : IEEE Transactions on Electron Devices. 62, 10, p. 3406-3412

    Research output: Contribution to journalArticle

  12. 2014
  13. Intrinsic Performance of InAs Nanowire Capacitors

    Kristofer Jansson, Erik Lind & Lars-Erik Wernersson, 2014, In : IEEE Transactions on Electron Devices. 61, 2, p. 452-459

    Research output: Contribution to journalArticle

  14. Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

    Cezar Zota, Guntrade Roll, Lars-Erik Wernersson & Erik Lind, 2014, In : IEEE Transactions on Electron Devices. 61, 12, p. 4078-4083

    Research output: Contribution to journalArticle

  15. 2013
  16. A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs

    Sofia Johansson, Martin Berg, Karl-Magnus Persson & Erik Lind, 2013, In : IEEE Transactions on Electron Devices. 60, 2, p. 776-781

    Research output: Contribution to journalArticle

  17. Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

    Karl-Magnus Persson, Martin Berg, Mattias Borg, Jun Wu, Sofia Johansson, Johannes Svensson, Kristofer Jansson, Erik Lind & Lars-Erik Wernersson, 2013, In : IEEE Transactions on Electron Devices. 60, 9, p. 2761-2767

    Research output: Contribution to journalArticle

  18. 2012
  19. 1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors

    Collin J. Delker, Seongmin Kim, Mattias Borg, Lars-Erik Wernersson & David B. Janes, 2012, In : IEEE Transactions on Electron Devices. 59, 7, p. 1980-1987

    Research output: Contribution to journalArticle

  20. Performance Evaluation of III–V Nanowire Transistors

    Kristofer Jansson, Erik Lind & Lars-Erik Wernersson, 2012, In : IEEE Transactions on Electron Devices. 59, 9, p. 2375-2382

    Research output: Contribution to journalArticle

  21. 2009
  22. Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

    Erik Lind, Martin Persson, Yann-Michel Niquet & Lars-Erik Wernersson, 2009, In : IEEE Transactions on Electron Devices. 56, 2, p. 201-205

    Research output: Contribution to journalArticle

  23. 2008
  24. Development of a Vertical Wrap-Gated InAs FET

    Claes Thelander, Carl Rehnstedt, Linus E. Froberg, Erik Lind, Thomas Martensson, Philippe Caroff, Truls Lowgren, B. Jonas Ohlsson, Lars Samuelson & Lars-Erik Wernersson, 2008, In : IEEE Transactions on Electron Devices. 55, 11, p. 3030-3036

    Research output: Contribution to journalArticle

  25. Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

    M. Jagadesh Kumar, Mark A. Reed, Gehan A. J. Amaratunga, Guy M. Cohen, David B. Janes, Charles M. Lieber, M. Meyyappan, Lars-Erik Wernersson, Kang L. Wang, Robert S. Chau, Theodore I. Kamins, Mark Lundstrom, Bin Yu & Chongwu Zhou, 2008, In : IEEE Transactions on Electron Devices. 55, 11, p. 2813-2819

    Research output: Contribution to journalDebate/Note/Editorial

  26. Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

    Carl Rehnstedt, Thomas Mårtensson, Claes Thelander, Lars Samuelson & Lars-Erik Wernersson, 2008, In : IEEE Transactions on Electron Devices. 55, 11, p. 3037-3041

    Research output: Contribution to journalArticle

  27. 2006
  28. Reducing power consumption in liquid-crystal displays

    TN Ruckmongathan, M Govind & Deepak Gajanana, 2006, In : IEEE Transactions on Electron Devices. 53, 7, p. 1559-1566

    Research output: Contribution to journalArticle

  29. 2005
  30. Binary addressing technique with duty cycle control for LCDs

    T N Ruckmongathan, M Govind, S V Ashoka & Deepak Gajanana, 2005, In : IEEE Transactions on Electron Devices. 52, 3, p. 345-351

    Research output: Contribution to journalArticle

  31. 2003
  32. Special issue on nanoelectronics

    GL Snider, Lars Samuelson & H Sakaki, 2003, In : IEEE Transactions on Electron Devices. 50, 9, p. 1821-1822

    Research output: Contribution to journalDebate/Note/Editorial

  33. 2002
  34. Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces

    Erik Lind, Lars-Erik Wernersson, Ines Pietzonka & Werner Seifert, 2002, In : IEEE Transactions on Electron Devices. 49, 6, p. 1066-1069

    Research output: Contribution to journalArticle