Nano Electronics

Organisational unit: Research group

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  1. 2019
  2. Millimeter-Wave Radar for Low-Power Applications

    Sebastian Heunisch, 2019 Aug 19, Lund: Lund University. 156 p.

    Research output: ThesisDoctoral Thesis (compilation)

  3. Trap-aware compact modeling and power-performance assessment of III-V tunnel FET

    Xiang, Y., Yakimets, D., Sant, S., Memisevic, E., Bardon, M. G., Verhulst, A. S., Parvais, B., Schenk, A., Lars Erik Wernersson & Groeseneken, G., 2019 Feb 14, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018. Institute of Electrical and Electronics Engineers Inc., 8640183

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  4. Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

    Stefan Andric, Lars Ohlsson & Lars Erik Wenrersson, 2019 Feb 7, 2019 92nd ARFTG Microwave Measurement Conference: Next Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019. Institute of Electrical and Electronics Engineers Inc., 8637222

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  5. An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K

    Rosca, T., Saeidi, A., Memisevic, E., L. E. Wernersson & Ionescu, A. M., 2019 Jan 17, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., Vol. 2018. p. 13.5.1-13.5.4 8614665

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  6. Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si

    Adam Jönsson, Johannes Svensson & Lars-Erik Wernersson, 2019 Jan 17, 2018 IEEE International Electron Devices Meeting (IEDM). IEEE--Institute of Electrical and Electronics Engineers Inc., p. 39.3.1-39.3.4

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  7. Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

    Vasen, T., Ramvall, P., Afzalian, A., Doornbos, G., Holland, M., C. Thelander, K. A. Dick, L. E. Wernersson & Passlack, M., 2019 Jan 17, In : Scientific Reports. 9, 1, 202.

    Research output: Contribution to journalArticle

  8. Core-shell tfet developments and tfet limitations

    Passlack, M., Ramvall, P., Vasen, T., Afzalian, A., C. Thelander, K. A. Dick, L. E. Wernersson, Doornbos, G. & Holland, M., 2019, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804674

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  9. Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

    Mattias Borg, Gignac, L., Bruley, J., Malmgren, A., Sant, S., Convertino, C., Rossell, M. D., Sousa, M., Breslin, C., Riel, H., Moselund, K. E. & Schmid, H., 2019, In : Nanotechnology. 30, 8, 084004.

    Research output: Contribution to journalArticle

  10. Vertical III-V Nanowire MOSFETs

    Olli-Pekka Kilpi, 2019, Department of Electrical and Information Technology, Lund University. 90 p.

    Research output: ThesisDoctoral Thesis (compilation)

  11. 2018
  12. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 Jun 25, 2018 76th Device Research Conference (DRC). IEEE--Institute of Electrical and Electronics Engineers Inc., p. 137-138 2 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  13. Fabrication of Tunnel Field-Effect Transistors

    Abinaya Krishnaraja, Memisevic, E., Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  14. RF Characterisation of Vertical III-V Nanowire Tunnel FETs

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  15. Capacitance Measurements in Vertical III-V Nanowire TFETs

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 4, In : IEEE Electron Device Letters. 39, 7, p. 943-946 4 p.

    Research output: Contribution to journalLetter

  16. CMOS Integration Based on All-III-V Materials

    Adam Jönsson, Johannes Svensson & Lars-Erik Wernersson, 2018 Mar 10.

    Research output: Contribution to conferenceAbstract

  17. Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si

    Olli Pekka Kilpi, Johannes Svensson & Lars Erik Wernersson, 2018 Jan 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., Vol. Part F134366. p. 17.3.1-17.3.4

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  18. A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs

    Netsu, S., Markus Hellenbrand, Zota, C. B., Miyamoto, Y. & Erik Lind, 2018, In : IEEE Journal of the Electron Devices Society. 6, p. 408-412

    Research output: Contribution to journalArticle

  19. Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth

    Anette Löfstrand, Graczyk, M., Suyatin, D., Kvennefors, A., Maximov, I., Johannes Svensson & Lars-Erik Wernersson, 2018, (Unpublished).

    Research output: Contribution to conferenceAbstract

  20. Clutter analysis in a time-domain millimeter-wave reflectometry setup

    Sebastian Heunisch, Lars Ohlsson & Lars Erik Wernersson, 2018, 12th European Conference on Antennas and Propagation (EuCAP 2018).

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  21. Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs

    Sant, S., Memisevic, E., Lars-Erik Wernersson & Schenk, A., 2018, In : Composants nanoélectroniques.

    Research output: Contribution to journalArticle

  22. 2017
  23. Junctionless tri-gate InGaAs MOSFETs

    Zota, C. B., Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 Dec 1, In : Japanese Journal of Applied Physics. 56, 12, 120306.

    Research output: Contribution to journalArticle

  24. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

    Memisevic, E., Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Nov, In : IEEE Transactions on Electron Devices. 64, 11, p. 4746-4751

    Research output: Contribution to journalArticle

  25. The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs

    Schenk, A., Sant, S., Moselund, K., Riel, H., Memisevic, E. & L. E. Wernersson, 2017 Oct 25, 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-September. p. 273-276 4 p. 8085317

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  26. Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Sep, 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE--Institute of Electrical and Electronics Engineers Inc., p. 38-41 4 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  27. Vertical III-V Nanowire Tunnel Field-Effect Transistor

    Memisevic, E., 2017 Aug 21, Lund: The Department of Electrical and Information Technology.

    Research output: ThesisDoctoral Thesis (compilation)

  28. First InGaAs lateral nanowire MOSFET RF noise measurements and model

    Lars Ohlsson, Fredrik Lindelow, Zota, C. B., Ohlrogge, M., Merkle, T., Lars Erik Wernersson & Erik Lind, 2017 Aug 1, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999451

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  29. Record performance for junctionless transistors in InGaAs MOSFETs

    Zota, C. B., Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T34-T35 7998190

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  30. Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

    Olli Pekka Kilpi, Wu, J., Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T36-T37 7998191

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  31. Properties of III-V nanowires: MOSFETs and TunnelFETs

    Lars-Erik Wernersson, 2017 Jul 1, Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 99-100 2 p. 7962611

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  32. III-V MOSFETs for High-Frequency and Digital Applications

    Zota, C., 2017 Apr 10, Department of Electrical and Information Technology, Lund University.

    Research output: ThesisDoctoral Thesis (compilation)

  33. InGaAs tri-gate MOSFETs with record on-current

    Zota, C. B., Fredrik Lindelow, Lars Erik Wernersson & Erik Lind, 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 3.2.1-3.2.4 7838336

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  34. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

    Memisevic, E., J. Svensson, M. Hellenbrand, E. Lind & L. E. Wernersson, 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 19.1.1-19.1.4 7838450

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  35. A transmission line model for co-designed slot-coupled dielectric resonator antennas

    Lars Ohlsson, Daniel Sjöberg & Lars Erik Wernersson, 2017 Jan 18, European Microwave Week 2016: "Microwaves Everywhere", EuMW 2016 - Conference Proceedings; 46th European Microwave Conference, EuMC 2016. Institute of Electrical and Electronics Engineers Inc., p. 333-336 4 p. 7824346

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  36. Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V

    Memisevic, E., Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  37. 2016
  38. Autonomy in PhD-education – Supervising for Independence

    Mattias Borg, Fredrik Kopsch, Torgny Roxå, Paul Stankovski & Johannes Svensson, 2016 Dec 15, LTHs 9:e Pedagogiska Inspirationskonferens. Andersson, R. & Tempte, L. (eds.). LTH, Lund University, p. 9-13 5 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

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