Erik Lind

Professor, Ph.D.
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  1. 2021
  2. Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers

    Navya S. Garigapati, Fredrik Lindelow, Lasse Sodergren & Erik Lind, 2021, In: IEEE Transactions on Electron Devices. 68, 8, p. 3762-3767 6 p., 9477554.

    Research output: Contribution to journalArticle

  3. 2020
  4. Vertical nanowire III–V MOSFETs with improved high-frequency gain

    Olli-Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2020 Apr, In: Electronics Letters. 56, 13, p. 669 - 671

    Research output: Contribution to journalArticle

  5. Weyl Semi-Metal-Based High-Frequency Amplifiers

    A. Toniato, B. Gotsmann, E. Lind & C. B. Zota, 2020 Feb 13, 2019 IEEE International Electron Devices Meeting, IEDM . Institute of Electrical and Electronics Engineers Inc., 8993575. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  6. Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs

    Markus Hellenbrand, Erik Lind, Olli-Pekka Kilpi & Lars-Erik Wernersson, 2020, In: Solid-State Electronics. 171, 107840.

    Research output: Contribution to journalArticle

  7. High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm

    Olli Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Axel R. Persson, Reine Wallenberg, Erik Lind & Lars Erik Wernersson, 2020, In: IEEE Electron Device Letters. 41, 8, p. 1161-1164 4 p., 9123921.

    Research output: Contribution to journalArticle

  8. 2019
  9. Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

    Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2019 Jul 2.

    Research output: Contribution to conferencePaper, not in proceeding

  10. Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

    Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2019 May 18, In: Microelectronic Engineering. 110986.

    Research output: Contribution to journalArticle

  11. 2018
  12. Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2018 Jul, In: IEEE Electron Device Letters. 39, 7, p. 1089-1091

    Research output: Contribution to journalArticle

  13. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 Jun 25, 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., p. 137-138 2 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  14. Fabrication of Tunnel Field-Effect Transistors

    Abinaya Krishnaraja, Elvedin Memisevic, Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  15. RF Characterisation of Vertical III-V Nanowire Tunnel FETs

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  16. Capacitance Measurements in Vertical III-V Nanowire TFETs

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 4, In: IEEE Electron Device Letters. 39, 7, p. 943-946 4 p.

    Research output: Contribution to journalLetter

  17. A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs

    Seiko Netsu, Markus Hellenbrand, Cezar B. Zota, Yasuyuki Miyamoto & Erik Lind, 2018, In: IEEE Journal of the Electron Devices Society. 6, p. 408-412

    Research output: Contribution to journalArticle

  18. 2017
  19. Junctionless tri-gate InGaAs MOSFETs

    Cezar B. Zota, Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 Dec 1, In: Japanese Journal of Applied Physics. 56, 12, 120306.

    Research output: Contribution to journalArticle

  20. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Nov, In: IEEE Transactions on Electron Devices. 64, 11, p. 4746-4751

    Research output: Contribution to journalArticle

  21. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

    Olli Pekka Kilpi, Johannes Svensson, Jun Wu, Axel R. Persson, Reine Wallenberg, Erik Lind & Lars Erik Wernersson, 2017 Oct 11, In: Nano Letters. 17, 10, p. 6006-6010 5 p.

    Research output: Contribution to journalArticle

  22. Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Sep, 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE - Institute of Electrical and Electronics Engineers Inc., p. 38-41 4 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  23. First InGaAs lateral nanowire MOSFET RF noise measurements and model

    Lars Ohlsson, Fredrik Lindelow, Cezar B. Zota, Matthias Ohlrogge, Thomas Merkle, Lars Erik Wernersson & Erik Lind, 2017 Aug 1, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999451

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  24. Record performance for junctionless transistors in InGaAs MOSFETs

    Cezar B. Zota, Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T34-T35 7998190

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  25. Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

    Olli Pekka Kilpi, Jun Wu, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T36-T37 7998191

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  26. 1/f and RTS Noise in InGaAs Nanowire MOSFETs

    Christian Möhle, Cezar Zota, Markus Hellenbrand & Erik Lind, 2017 Jun 28.

    Research output: Contribution to conferencePaper, not in proceeding

  27. 1/f and RTS noise in InGaAs nanowire MOSFETs

    C. Möhle, C. B. Zota, M. Hellenbrand & E. Lind, 2017 Jun 25, In: Microelectronic Engineering. 178, p. 52-55

    Research output: Contribution to journalArticle

  28. Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

    Elvedin Memisevic, Markus Hellenbrand, Erik Lind, Axel Persson, Saurabh Sant, Andreas Schenk, Johannes Svensson, Reine Wallenberg & Lars-Erik Wernersson, 2017 Jun 14, In: Nano Letters.

    Research output: Contribution to journalLetter

  29. Gated Hall effect measurements on selectively grown InGaAs nanowires

    F. Lindelöw, C. B. Zota & E. Lind, 2017 Apr 25, In: Nanotechnology. 28, 20, 205204.

    Research output: Contribution to journalArticle

  30. InGaAs tri-gate MOSFETs with record on-current

    Cezar B. Zota, Fredrik Lindelow, Lars Erik Wernersson & Erik Lind, 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 3.2.1-3.2.4 7838336

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  31. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

    E. Memisevic, J. Svensson, M. Hellenbrand, E. Lind & L. E. Wernersson, 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 19.1.1-19.1.4 7838450

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  32. Impact of doping and diameter on the electrical properties of GaSb nanowires

    Aein S. Babadi, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 Jan 30, In: Applied Physics Letters. 110, 5, 053502.

    Research output: Contribution to journalArticle

  33. Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

    Elvedin Memisevic, Erik Lind, Markus Hellenbrand, Johannes Svensson & Lars-Erik Wernersson, 2017, In: IEEE Electron Device Letters. p. 1661 - 1664

    Research output: Contribution to journalLetter

  34. Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  35. 2016
  36. High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

    C. B. Zota, F. Lindelöw, L. E. Wernersson & E. Lind, 2016 Oct 27, In: Electronics Letters. 52, 22, p. 1869-1871 3 p.

    Research output: Contribution to journalArticle

  37. High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

    Cezar B. Zota, Lars Erik Wernersson & Erik Lind, 2016 Oct 1, In: IEEE Electron Device Letters. 37, 10, p. 1264-1267 4 p., 7552490.

    Research output: Contribution to journalArticle

  38. InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

    Elvedin Memisevic, J. Svensson, E. Lind & L. E. Wernersson, 2016 Sep 27, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., p. 154-155 2 p. 7578029

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  39. InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v

    Cezar B. Zota, Fredrik Lindelöw, Lars Erik Wernersson & Erik Lind, 2016 Sep 21, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573418

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  40. High frequency III-V nanowire MOSFETs

    Erik Lind, 2016 Aug 25, In: Semiconductor Science and Technology. 31, 9, 093005.

    Research output: Contribution to journalReview article

  41. Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

    Martin Berg, Olli-Pekka Kilpi, Karl-Magnus Persson, Johannes Svensson, Markus Hellenbrand, Erik Lind & Lars-Erik Wernersson, 2016 Aug 8, In: IEEE Electron Device Letters. 37, 8, p. 966 - 969 4 p.

    Research output: Contribution to journalLetter

  42. Size-effects in indium gallium arsenide nanowire field-effect transistors

    Cezar B. Zota & E. Lind, 2016 Aug 8, In: Applied Physics Letters. 109, 6, 063505.

    Research output: Contribution to journalArticle

  43. Amplifier Design Using Vertical InAs Nanowire MOSFETs

    Kristofer Jansson, Erik Lind & Lars Erik Wernersson, 2016 Jun 1, In: IEEE Transactions on Electron Devices. 63, 6, p. 2353-2359 7 p., 7465782.

    Research output: Contribution to journalArticle

  44. Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric

    Guntrade Roll, Jiongjiong Mo, Erik Lind, Sofia Johansson & Lars Erik Wernersson, 2016 Jun 1, In: IEEE Transactions on Device and Materials Reliability. 16, 2, p. 112-116 5 p., 7422103.

    Research output: Contribution to journalArticle

  45. Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

    Elvedin Memisevic, Johannes Svensson, Markus Hellenbrand, Erik Lind & Lars-Erik Wernersson, 2016 May 5, In: IEEE Electron Device Letters. 37, 5, p. 549 - 552

    Research output: Contribution to journalLetter

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