Johannes Svensson

Researcher, PhD
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  1. 2020
  2. Compressively-strained GaSb nanowires with core-shell heterostructures

    Zhongyunshen Zhu, Johannes Svensson, Axel R. Persson, Reine Wallenberg, Andrei V. Gromov & Lars Erik Wernersson, 2020 Sep, In: Nano Research. 13, 9, p. 2517-2524 8 p.

    Research output: Contribution to journalArticle

  3. Vertical nanowire III–V MOSFETs with improved high-frequency gain

    Olli-Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2020 Apr, In: Electronics Letters. 56, 13, p. 669 - 671

    Research output: Contribution to journalArticle

  4. Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

    Anton E.O. Persson, Robin Athle, Pontus Littow, Karl Magnus Persson, Johannes Svensson, Mattias Borg & Lars Erik Wernersson, 2020 Feb 10, In: Applied Physics Letters. 116, 6, 062902.

    Research output: Contribution to journalArticle

  5. High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm

    Olli Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, Axel R. Persson, Reine Wallenberg, Erik Lind & Lars Erik Wernersson, 2020, In: IEEE Electron Device Letters. 41, 8, p. 1161-1164 4 p., 9123921.

    Research output: Contribution to journalArticle

  6. Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1

    Abinaya Krishnaraja, Johannes Svensson & Lars Erik Wernersson, 2020, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., p. 17-18 2 p. 9131656

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  7. 2019
  8. Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

    Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2019 Jul 2.

    Research output: Contribution to conferencePaper, not in proceeding

  9. Low-Frequency Noise in Nanowire and Planar III-V MOSFETs

    Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2019 May 18, In: Microelectronic Engineering. 110986.

    Research output: Contribution to journalArticle

  10. Integration of InSb on Si by Rapid Melt Growth

    Heera Menon, Matthew Steer Matthew Steer, Iain Thayne Iain Thayne, Johannes Svensson, Lars-Erik Wernersson & Mattias Borg, 2019 May 1.

    Research output: Contribution to conferenceAbstract

  11. Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si

    Adam Jönsson, Johannes Svensson & Lars-Erik Wernersson, 2019 Jan 17, 2018 IEEE International Electron Devices Meeting (IEDM). IEEE - Institute of Electrical and Electronics Engineers Inc., p. 39.3.1-39.3.4

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  12. 2018
  13. Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2018 Jul, In: IEEE Electron Device Letters. 39, 7, p. 1089-1091

    Research output: Contribution to journalArticle

  14. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 Jun 25, 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., p. 137-138 2 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  15. Fabrication of Tunnel Field-Effect Transistors

    Abinaya Krishnaraja, Elvedin Memisevic, Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  16. RF Characterisation of Vertical III-V Nanowire Tunnel FETs

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  17. Capacitance Measurements in Vertical III-V Nanowire TFETs

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 4, In: IEEE Electron Device Letters. 39, 7, p. 943-946 4 p.

    Research output: Contribution to journalLetter

  18. CMOS Integration Based on All-III-V Materials

    Adam Jönsson, Johannes Svensson & Lars-Erik Wernersson, 2018 Mar 10.

    Research output: Contribution to conferenceAbstract

  19. Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si

    Olli Pekka Kilpi, Johannes Svensson & Lars Erik Wernersson, 2018 Jan 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., Vol. Part F134366. p. 17.3.1-17.3.4

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  20. Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth

    Anette Löfstrand, Mariusz Graczyk, Dmitry Suyatin, Anders Kvennefors, Ivan Maximov, Johannes Svensson & Lars-Erik Wernersson, 2018, (Unpublished).

    Research output: Contribution to conferenceAbstract

  21. 2017
  22. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Nov, In: IEEE Transactions on Electron Devices. 64, 11, p. 4746-4751

    Research output: Contribution to journalArticle

  23. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

    Olli Pekka Kilpi, Johannes Svensson, Jun Wu, Axel R. Persson, Reine Wallenberg, Erik Lind & Lars Erik Wernersson, 2017 Oct 11, In: Nano Letters. 17, 10, p. 6006-6010 5 p.

    Research output: Contribution to journalArticle

  24. Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs

    Markus Hellenbrand, Elvedin Memisevic, Martin Berg, Olli-Pekka Kilpi, Johannes Svensson & Lars-Erik Wernersson, 2017 Sep 28, In: IEEE Electron Device Letters.

    Research output: Contribution to journalLetter

  25. Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

    Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Sep, 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE - Institute of Electrical and Electronics Engineers Inc., p. 38-41 4 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  26. Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

    Olli Pekka Kilpi, Jun Wu, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T36-T37 7998191

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  27. Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

    Elvedin Memisevic, Markus Hellenbrand, Erik Lind, Axel Persson, Saurabh Sant, Andreas Schenk, Johannes Svensson, Reine Wallenberg & Lars-Erik Wernersson, 2017 Jun 14, In: Nano Letters.

    Research output: Contribution to journalLetter

  28. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

    E. Memisevic, J. Svensson, M. Hellenbrand, E. Lind & L. E. Wernersson, 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 19.1.1-19.1.4 7838450

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  29. Impact of doping and diameter on the electrical properties of GaSb nanowires

    Aein S. Babadi, Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 Jan 30, In: Applied Physics Letters. 110, 5, 053502.

    Research output: Contribution to journalArticle

  30. Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

    Elvedin Memisevic, Erik Lind, Markus Hellenbrand, Johannes Svensson & Lars-Erik Wernersson, 2017, In: IEEE Electron Device Letters. p. 1661 - 1664

    Research output: Contribution to journalLetter

  31. Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  32. 2016
  33. Autonomy in PhD-education – Supervising for Independence

    Mattias Borg, Fredrik Kopsch, Torgny Roxå, Paul Stankovski & Johannes Svensson, 2016 Dec 15, LTHs 9:e Pedagogiska Inspirationskonferens. Andersson, R. & Tempte, L. (eds.). LTH, Lund University, p. 9-13 5 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  34. InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

    Elvedin Memisevic, J. Svensson, E. Lind & L. E. Wernersson, 2016 Sep 27, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., p. 154-155 2 p. 7578029

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  35. Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

    Martin Berg, Olli-Pekka Kilpi, Karl-Magnus Persson, Johannes Svensson, Markus Hellenbrand, Erik Lind & Lars-Erik Wernersson, 2016 Aug 8, In: IEEE Electron Device Letters. 37, 8, p. 966 - 969 4 p.

    Research output: Contribution to journalLetter

  36. Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

    Elvedin Memisevic, Johannes Svensson, Markus Hellenbrand, Erik Lind & Lars-Erik Wernersson, 2016 May 5, In: IEEE Electron Device Letters. 37, 5, p. 549 - 552

    Research output: Contribution to journalLetter

  37. Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si

    Martin Berg, Karl-Magnus Persson, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2016 Feb 16, Technical Digest - International Electron Devices Meeting, IEDM. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-February. 7409806

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  38. Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

    Michael D Thompson, Aiyeshah Alhodaib, Adam P Craig, Alex Robson, Atif Aziz, Anthony Krier, Johannes Svensson, Lars-Erik Wernersson, Ana M Sanchez & Andrew R J Marshall, 2016, In: Nano Letters. 16, 1, p. 182-187

    Research output: Contribution to journalArticle

  39. 2015
  40. A transmission line method for evaluation of vertical InAs nanowire contacts

    Martin Berg, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2015, In: Applied Physics Letters. 107, 23, 232102.

    Research output: Contribution to journalArticle

  41. III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si

    Johannes Svensson, Anil Dey, Daniel Jacobsson & Lars-Erik Wernersson, 2015, In: Nano Letters. 15, 12, p. 7898-7904

    Research output: Contribution to journalArticle

  42. Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates

    Elvedin Memisevic, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2015, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  43. 2014
  44. Design of Radial Nanowire Tunnel Field-Effect Transistors

    Anil Dey, Erik Lind, Johannes Svensson, M. Ek, C. Thelander & Lars-Erik Wernersson, 2014, 2014 72nd Annual Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., p. 81-82

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  45. 2013
  46. Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.

    Johannes Svensson, Nicklas Anttu, Neimantas Vainorius, Mattias Borg & Lars-Erik Wernersson, 2013, In: Nano Letters. 13, 4, p. 1380-1385

    Research output: Contribution to journalArticle

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