Lars-Erik Wernersson

Professor
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  1. 2019
  2. Trap-aware compact modeling and power-performance assessment of III-V tunnel FET

    Xiang, Y., Yakimets, D., Sant, S., Memisevic, E., Bardon, M. G., Verhulst, A. S., Parvais, B., Schenk, A., Lars Erik Wernersson & Groeseneken, G., 2019 Feb 14, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018. Institute of Electrical and Electronics Engineers Inc., 8640183

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  3. Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

    Stefan Andric, Lars Ohlsson & Lars Erik Wenrersson, 2019 Feb 7, 2019 92nd ARFTG Microwave Measurement Conference: Next Generation Microwave and Millimeter-Wave Measurement Techniques and Systems, ARFTG 2019. Institute of Electrical and Electronics Engineers Inc., 8637222

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  4. An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K

    Rosca, T., Saeidi, A., Memisevic, E., L. E. Wernersson & Ionescu, A. M., 2019 Jan 17, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., Vol. 2018. p. 13.5.1-13.5.4 8614665

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  5. Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si

    Adam Jönsson, Johannes Svensson & Lars-Erik Wernersson, 2019 Jan 17, 2018 IEEE International Electron Devices Meeting (IEDM). IEEE--Institute of Electrical and Electronics Engineers Inc., p. 39.3.1-39.3.4

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  6. Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

    Vasen, T., Ramvall, P., Afzalian, A., Doornbos, G., Holland, M., C. Thelander, K. A. Dick, L. E. Wernersson & Passlack, M., 2019 Jan 17, In : Scientific Reports. 9, 1, 202.

    Research output: Contribution to journalArticle

  7. 2018
  8. Pulse-Distortion Analysis for Millimeter-Wave Time-Domain Material Identification

    Sebastian Heunisch, Lars Ohlsson & Lars Erik Wernersson, 2018 Nov 20, 2018 48th European Microwave Conference, EuMC 2018. Institute of Electrical and Electronics Engineers Inc., p. 572-575 4 p. 8541537

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  9. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 Jun 25, 2018 76th Device Research Conference (DRC). IEEE--Institute of Electrical and Electronics Engineers Inc., p. 137-138 2 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  10. Fabrication of Tunnel Field-Effect Transistors

    Abinaya Krishnaraja, Memisevic, E., Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  11. RF Characterisation of Vertical III-V Nanowire Tunnel FETs

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  12. Capacitance Measurements in Vertical III-V Nanowire TFETs

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 4, In : IEEE Electron Device Letters. 39, 7, p. 943-946 4 p.

    Research output: Contribution to journalLetter

  13. CMOS Integration Based on All-III-V Materials

    Adam Jönsson, Johannes Svensson & Lars-Erik Wernersson, 2018 Mar 10.

    Research output: Contribution to conferenceAbstract

  14. Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

    Zhang, J., Alessandri, C., Fay, P., Seabaugh, A., Ytterdal, T., Memisevic, E. & L. E. Wernersson, 2018 Mar 7, 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. Institute of Electrical and Electronics Engineers Inc., Vol. 2018-March. p. 1-2 2 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  15. Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si

    Olli Pekka Kilpi, Johannes Svensson & Lars Erik Wernersson, 2018 Jan 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., Vol. Part F134366. p. 17.3.1-17.3.4

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  16. Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth

    Anette Löfstrand, Graczyk, M., Suyatin, D., Kvennefors, A., Maximov, I., Johannes Svensson & Lars-Erik Wernersson, 2018, (Unpublished).

    Research output: Contribution to conferenceAbstract

  17. Clutter analysis in a time-domain millimeter-wave reflectometry setup

    Sebastian Heunisch, Lars Ohlsson & Lars Erik Wernersson, 2018, 12th European Conference on Antennas and Propagation (EuCAP 2018).

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  18. Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs

    Sant, S., Memisevic, E., Lars-Erik Wernersson & Schenk, A., 2018, In : Composants nanoélectroniques.

    Research output: Contribution to journalArticle

  19. 2017
  20. Mixed-domain gating algorithm for time-domain characterisation of millimetre-wave antennas

    Lars Ohlsson, Vakili, I., Daniel Sjoberg & Lars Erik Wernersson, 2017 Dec 19, European Microwave Week 2017: "A Prime Year for a Prime Event", EuMW 2017 - Conference Proceedings; 47th European Microwave Conference, EuMC 2017. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 256-259 4 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  21. Junctionless tri-gate InGaAs MOSFETs

    Zota, C. B., Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 Dec 1, In : Japanese Journal of Applied Physics. 56, 12, 120306.

    Research output: Contribution to journalArticle

  22. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

    Memisevic, E., Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Nov, In : IEEE Transactions on Electron Devices. 64, 11, p. 4746-4751

    Research output: Contribution to journalArticle

  23. The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs

    Schenk, A., Sant, S., Moselund, K., Riel, H., Memisevic, E. & L. E. Wernersson, 2017 Oct 25, 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-September. p. 273-276 4 p. 8085317

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  24. Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Sep, 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE--Institute of Electrical and Electronics Engineers Inc., p. 38-41 4 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  25. First InGaAs lateral nanowire MOSFET RF noise measurements and model

    Lars Ohlsson, Fredrik Lindelow, Zota, C. B., Ohlrogge, M., Merkle, T., Lars Erik Wernersson & Erik Lind, 2017 Aug 1, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999451

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  26. Record performance for junctionless transistors in InGaAs MOSFETs

    Zota, C. B., Mattias Borg, Lars Erik Wernersson & Erik Lind, 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T34-T35 7998190

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  27. Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v

    Olli Pekka Kilpi, Wu, J., Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T36-T37 7998191

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  28. Properties of III-V nanowires: MOSFETs and TunnelFETs

    Lars-Erik Wernersson, 2017 Jul 1, Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 99-100 2 p. 7962611

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  29. InGaAs tri-gate MOSFETs with record on-current

    Zota, C. B., Fredrik Lindelow, Lars Erik Wernersson & Erik Lind, 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 3.2.1-3.2.4 7838336

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  30. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

    Memisevic, E., J. Svensson, M. Hellenbrand, E. Lind & L. E. Wernersson, 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 19.1.1-19.1.4 7838450

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  31. Impact of doping and diameter on the electrical properties of GaSb nanowires

    Babadi, A. S., Johannes Svensson, Erik Lind & Lars Erik Wernersson, 2017 Jan 30, In : Applied Physics Letters. 110, 5, 053502.

    Research output: Contribution to journalArticle

  32. A transmission line model for co-designed slot-coupled dielectric resonator antennas

    Lars Ohlsson, Daniel Sjöberg & Lars Erik Wernersson, 2017 Jan 18, European Microwave Week 2016: "Microwaves Everywhere", EuMW 2016 - Conference Proceedings; 46th European Microwave Conference, EuMC 2016. Institute of Electrical and Electronics Engineers Inc., p. 333-336 4 p. 7824346

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  33. Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V

    Memisevic, E., Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  34. 2016
  35. High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

    Zota, C. B., F. Lindelöw, L. E. Wernersson & E. Lind, 2016 Oct 27, In : Electronics Letters. 52, 22, p. 1869-1871 3 p.

    Research output: Contribution to journalArticle

  36. High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

    Zota, C. B., Lars Erik Wernersson & Erik Lind, 2016 Oct 1, In : IEEE Electron Device Letters. 37, 10, p. 1264-1267 4 p., 7552490.

    Research output: Contribution to journalArticle

  37. InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

    Memisevic, E., J. Svensson, E. Lind & L. E. Wernersson, 2016 Sep 27, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., p. 154-155 2 p. 7578029

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  38. InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

    Vasen, T., Ramvall, P., Afzalian, A., C. Thelander, K. A. Dick, Holland, M., Doornbos, G., Wang, S. W., Oxland, R., Vellianitis, G., Van Dal, M. J. H., Duriez, B., Ramirez, J. R., Droopad, R., L. E. Wernersson, L. Samuelson, Chen, T. K., Yeo, Y. C. & Passlack, M., 2016 Sep 21, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-September. 7573417

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

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