Markus Hellenbrand

Doctoral Student, Master of Science in Physics, Master of Science, Bachelor of Science

Research areas and keywords

UKÄ subject classification

  • Condensed Matter Physics
  • Nano Technology


  • III-V, MOSFETs, Nanowires, RF Transistors, Low-Frequency Noise


Metal-oxide-semiconductor field-effect transistors (MOSFETs) are critical components in modern digital infrastructure and communication systems. The efficiency and reliability of these MOSFETs are affected by their gate oxides, which can suffer from material defects. My research focuses on the characterisation of these gate oxide defects in III-V MOSFETs, which is important for high-frequency applications such as wireless communication. A solid understanding of gate oxide defects will allow the mitigation of their effects on MOSFET operation and improve their performance.

Recent research outputs

Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 Jun 25, 2018 76th Device Research Conference (DRC). IEEE--Institute of Electrical and Electronics Engineers Inc., p. 137-138 2 p.

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

View All (16)