Markus Hellenbrand

Doctoral Student, Master of Science in Physics, Master of Science, Bachelor of Science
More filtering options
  1. 2019
  2. 2018
  3. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 Jun 25, 2018 76th Device Research Conference (DRC). IEEE--Institute of Electrical and Electronics Engineers Inc., p. 137-138 2 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  4. Fabrication of Tunnel Field-Effect Transistors

    Abinaya Krishnaraja, Memisevic, E., Markus Hellenbrand, Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  5. RF Characterisation of Vertical III-V Nanowire Tunnel FETs

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 24, (Unpublished).

    Research output: Contribution to conferencePaper, not in proceeding

  6. Capacitance Measurements in Vertical III-V Nanowire TFETs

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Abinaya Krishnaraja, Erik Lind & Lars-Erik Wernersson, 2018 May 4, In : IEEE Electron Device Letters. 39, 7, p. 943-946 4 p.

    Research output: Contribution to journalLetter

  7. A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs

    Netsu, S., Markus Hellenbrand, Zota, C. B., Miyamoto, Y. & Erik Lind, 2018, In : IEEE Journal of the Electron Devices Society. 6, p. 408-412

    Research output: Contribution to journalArticle

  8. 2017
  9. Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

    Markus Hellenbrand, Memisevic, E., Johannes Svensson, Erik Lind & Lars-Erik Wernersson, 2017 Sep, 47th European Solid-State Device Research Conference (ESSDERC), 2017. IEEE--Institute of Electrical and Electronics Engineers Inc., p. 38-41 4 p.

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  10. 1/f and RTS Noise in InGaAs Nanowire MOSFETs

    Möhle, C., Zota, C., Markus Hellenbrand & Erik Lind, 2017 Jun 28.

    Research output: Contribution to conferencePaper, not in proceeding

  11. 1/f and RTS noise in InGaAs nanowire MOSFETs

    Möhle, C., Zota, C. B., M. Hellenbrand & E. Lind, 2017 Jun 25, In : Microelectronic Engineering. 178, p. 52-55

    Research output: Contribution to journalArticle

  12. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

    Memisevic, E., J. Svensson, M. Hellenbrand, E. Lind & L. E. Wernersson, 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 19.1.1-19.1.4 7838450

    Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

  13. 2016