1 volt CMOS Bluetooth front-end

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP<sub>1</sub> is -16 dBm, and the IIP<sub>3</sub> is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • conversion gain, power consumption, topology robustness, measurement correlation, input matching, maximum signal headroom, Bluetooth specification 1.0B, passive mixer, common-gate LNA, CMOS Bluetooth front-end, low IF device, noise figure, Bluetooth receiver, 1 V, 2.5 mW, 5 dB, 14 dB, 0.25 micron
Original languageEnglish
Title of host publicationESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
PublisherUniv. Bologna
Pages795-798
ISBN (Print)88-900847-9-0
Publication statusPublished - 2002
Publication categoryResearch
Peer-reviewedYes
EventESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference - Firenze, Italy
Duration: 2002 Sep 242002 Sep 26

Conference

ConferenceESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
CountryItaly
CityFirenze
Period2002/09/242002/09/26