15 nm diameter InAs nanowire MOSFETs

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the study, among them selenium (Se), tin (Sn) and sulphur (S) to form n-i-n structures. We report very high current densities, up to 33 MA/cm2, comparable to modern HEMTs3, and a normalized transconductance of 1.8 S/mm for a nanowire with an intrinsic segment of nominally 150 nm and a diameter of 15 nm.

Details

Authors
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Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
Original languageEnglish
Title of host publication[Host publication title missing]
Pages21-22
Number of pages2
Publication statusPublished - 2011
Publication categoryResearch
Peer-reviewedYes
EventDevice Research Conference (DRC), 2011 69th Annual - Santa Barbara, CA, United States
Duration: 2011 Jun 20 → …

Publication series

Name
ISSN (Print)1548-3770

Conference

ConferenceDevice Research Conference (DRC), 2011 69th Annual
CountryUnited States
CitySanta Barbara, CA
Period2011/06/20 → …