1/f and RTS Noise in InGaAs Nanowire MOSFETs

Research output: Contribution to conferencePaper, not in proceeding

Abstract

Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.

Details

Authors
Organisations
External organisations
  • Lund University
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology

Keywords

  • InGaAs, MOSFETs, Nanowires, 1/f noise, RTS noise, Elastic tunnelling
Original languageEnglish
Publication statusPublished - 2017 Jun 28
Publication categoryResearch
Peer-reviewedNo
EventConference on Insulating Films on Semiconductors (INFOS) - Potsdam, Germany
Duration: 2017 Jun 272017 Jun 30

Conference

ConferenceConference on Insulating Films on Semiconductors (INFOS)
CountryGermany
CityPotsdam
Period2017/06/272017/06/30