1/f Noise Characterization in CMOS Transistors in 0.13um Technology

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13mum technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter alphaH and the Coulomb scattering parameter alphas have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model

Details

Authors
External organisations
  • External Organization - Unknown
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Title of host publication24th Norchip Conference, 2006.
Pages81-84
Publication statusPublished - 2006
Publication categoryResearch
Peer-reviewedYes
Externally publishedYes