60 GHz 130-nm CMOS Second Harmonic Power Amplifiers

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Abstract—Two different frequency doubling power amplifiers
have been measured, one with differential and one with singleended input, both with single-ended output at 60 GHz. The amplifiers have been implemented in a 1p8M 130-nm CMOS process. The resonant nodes are tuned to 30 GHz or 60 GHz using on-chip transmission lines, which have been simulated in ADS and Momentum.
The measured input impedance of the single-ended PA is high at 250 Ω, and the differential input is similar, making the PA a suitable load for an oscillator in a fully integrated transmitter.
The single-ended and differential input PA delivers 1 dBm and 3 dBm, respectively, of measured saturated output power to 50 Ω, both with a drain efficiency of 8%.

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Power Amplifier, 60 GHz, CMOS
Original languageEnglish
Title of host publication2008 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS 2008), Vols 1-4
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Pages300-303
Number of pages4
Publication statusPublished - 2008
Publication categoryResearch
Peer-reviewedYes
Event2008 IEEE Asia Pacific Conference on Circuits and Systems - APCCAS 2008 - Macao, China
Duration: 2008 Nov 302008 Dec 3

Conference

Conference2008 IEEE Asia Pacific Conference on Circuits and Systems - APCCAS 2008
CountryChina
CityMacao
Period2008/11/302008/12/03

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