A 3.4mW 65nm CMOS 5th Order Programmable Active-RC Channel Select Filter for LTE Receivers

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

In this work a low power 5th order chebyshev
active-RC low pass filter that meets Rel-8 LTE receiver
requirements has been designed with programmable bandwidth
and overshoot. Designed for a homodyne LTE receiver,
filter bandwidths from 700kHz to 10MHz are supported.
The bandwidth of the operational amplifiers is improved
using a novel phase enhancement technique. The filter was
implemented in 65nm CMOS technology with a core area
of 0.29mm2. Its total current consumption is 2.83mA from a
1.2V supply. The measured input referred noise is 39nV/

Hz,
the in-band IIP3 is 21.5dBm, at the band-edge the IIP3
is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the
compression point is 0dBm.

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Active filters, low pass filters, low power electronics, CMOS technology, Operational Amplifiers.
Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013
PublisherIEEE--Institute of Electrical and Electronics Engineers Inc.
Pages217-220
ISBN (Print)978-1-4673-6059-3
Publication statusPublished - 2013
Publication categoryResearch
Peer-reviewedYes
EventRFIC 2013 - Seattle, United States
Duration: 2013 Jun 2 → …

Publication series

Name
ISSN (Print)1529-2517

Conference

ConferenceRFIC 2013
CountryUnited States
CitySeattle
Period2013/06/02 → …