A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

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Abstract

We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.

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  • Atom and Molecular Physics and Optics
Original languageEnglish
JournalApplied Physics Reviews
Volume100
Issue number4
Publication statusPublished - 2006
Publication categoryResearch
Peer-reviewedYes