A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

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A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure. / Ouattara, Lassana; Mikkelsen, Anders; Lundgren, Edvin; Hoglund, L.; Asplund, C.; Andersson, J. Y.

In: Applied Physics Reviews, Vol. 100, No. 4, 2006.

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TY - JOUR

T1 - A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

AU - Ouattara, Lassana

AU - Mikkelsen, Anders

AU - Lundgren, Edvin

AU - Hoglund, L.

AU - Asplund, C.

AU - Andersson, J. Y.

PY - 2006

Y1 - 2006

N2 - We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.

AB - We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.

U2 - 10.1063/1.2245195

DO - 10.1063/1.2245195

M3 - Article

VL - 100

JO - Applied Physics Reviews

JF - Applied Physics Reviews

SN - 1931-9401

IS - 4

ER -