A new understanding of au-assisted growth of III-V semiconductor nanowires

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Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature-dependent interaction with Au.


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
Original languageEnglish
Pages (from-to)1603-1610
JournalAdvanced Functional Materials
Issue number10
Publication statusPublished - 2005
Publication categoryResearch