A novel frequency-doubling device based on three-terminal ballistic junction

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • GaInAs-InP, frequency multiplication, room temperature, GaInAs/InP quantum well structures, high-electron-mobility QW structures, trench gate-channel insulation, one-dimensional lateral-FET, 1D lateral-field-effect transistor, T-shaped ballistic junction, nonlinear electrical properties, frequency-doubling device, three-terminal ballistic junction
Original languageEnglish
Title of host publicationDevice Research Conference (Cat. No.02TH8606)
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Pages159-160
ISBN (Print)0-7803-7317-0
Publication statusPublished - 2002
Publication categoryResearch
Peer-reviewedYes
EventDevice Research Conference, 2002 - Santa Barbara, CA, United States
Duration: 2002 Jun 242002 Jun 26

Conference

ConferenceDevice Research Conference, 2002
CountryUnited States
CitySanta Barbara, CA
Period2002/06/242002/06/26