Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

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Abstract

The influence of InAs orientations and high-k oxide deposition conditions on the electrical and
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results
suggest that the interface traps around the conduction band edge are correlated to the As-oxide
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide
determines the border trap density, hence the capacitance frequency dispersion. The comparison of
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B
substrates followed by an annealing procedure at 400 oC.

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Subject classification (UKÄ) – MANDATORY

  • Atom and Molecular Physics and Optics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Interface, InAs, High k, MOS capacitors
Original languageEnglish
Pages (from-to)132905-132905-3
JournalApplied Physics Letters
Volume100
Issue number13
Publication statusPublished - 2012
Publication categoryResearch
Peer-reviewedYes

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