Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Research output: Contribution to journal › Article
Abstract
The influence of InAs orientations and high-k oxide deposition conditions on the electrical and
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results
suggest that the interface traps around the conduction band edge are correlated to the As-oxide
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide
determines the border trap density, hence the capacitance frequency dispersion. The comparison of
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B
substrates followed by an annealing procedure at 400 oC.
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results
suggest that the interface traps around the conduction band edge are correlated to the As-oxide
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide
determines the border trap density, hence the capacitance frequency dispersion. The comparison of
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B
substrates followed by an annealing procedure at 400 oC.
Details
| Authors | |
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| Organisations | |
| Research areas and keywords | Subject classification (UKÄ) – MANDATORY
Keywords
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| Original language | English |
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| Pages (from-to) | 132905-132905-3 |
| Journal | Applied Physics Letters |
| Volume | 100 |
| Issue number | 13 |
| Publication status | Published - 2012 |
| Publication category | Research |
| Peer-reviewed | Yes |
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