Assembling ferromagnetic single-electron transistors by atomic force microscopy

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Abstract

We demonstrate the assembly of nanoscale ferromagnetic single-electron transistors using atomic force microscopy for imaging as well as for nanoscale manipulation. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with angstrom precision into the gap between a plasma-oxidized Ni source and drain electrodes. The tunnel resistances can be tuned in real time during the device fabrication by repositioning the Au disc. Transport measurements reveal long-term stable single-electron transistor characteristics at 4.2 K. The well-controlled devices with very small central islands facilitate future in-depth studies of the interplay between Coulomb blockade, spin-dependent tunnelling and spin accumulation in ferromagnetic single-electron transistors at elevated temperatures.

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  • Nano Technology
Original languageEnglish
Article number055302
JournalNanotechnology
Volume18
Issue number5
Publication statusPublished - 2007
Publication categoryResearch
Peer-reviewedYes