Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots

Research output: Contribution to journalArticle

Abstract

We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k center dot p theory and provide a comprehensive overview of band structures for strained heterostructures.

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
Original languageEnglish
Article number205311
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume72
Issue number20
Publication statusPublished - 2005
Publication categoryResearch
Peer-reviewedYes