Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: A combined core-level and valence-band angle-resolved and dichroic photoemission study

Research output: Contribution to journalArticle


The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&bar; point of the Brillouin zone.


  • L. Nicolaï
  • J. M. Mariot
  • U. Djukic
  • W. Wang
  • O. Heckmann
  • M. C. Richter
  • J. Kanski
  • M. Leandersson
  • T. Balasubramanian
  • J. Sadowski
  • J. Braun
  • H. Ebert
  • I. Vobornik
  • J. Fujii
  • J. Minár
  • K. Hricovini
External organisations
  • Synchrotron SOLEIL
  • University of Paris-Saclay
  • Chalmers University of Technology
  • Linnaeus University
  • University of Warsaw
  • Institute of Physics PAS
  • Ludwig-Maximilian University of Munich
  • CNR Istituto Officina dei Materiali (IOM)
  • University of West Bohemia
  • Paris-Sorbonne University
  • Université de Cergy-Pontoise
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics


  • angle-resolved photoemission, bismuth, circular dichroism, electronic structure calculations, growth, indium arsenide, ultra-thin films
Original languageEnglish
Article number123012
JournalNew Journal of Physics
Issue number12
Publication statusPublished - 2019
Publication categoryResearch