Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

Research output: Contribution to journalArticle

Abstract

Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.

Details

Authors
  • L. Hoglund
  • P. O. Holtz
  • Håkan Pettersson
  • C. Asplund
  • Q. Wang
  • H. Malm
  • S. Almqvist
  • E. Petrini
  • J. Y. Andersson
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • semiconductor, quantum wells, semiconductor quantum dots, photodetectors, detectors, infrared, indium compounds, gallium arsenide, III-V semiconductors
Original languageEnglish
Article number203512
JournalApplied Physics Letters
Volume93
Issue number20
Publication statusPublished - 2008
Publication categoryResearch
Peer-reviewedYes