Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching

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Abstract

We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400-700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications. (C) 2013 AIP Publishing LLC.

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  • Condensed Matter Physics
Original languageEnglish
Article number212106
JournalApplied Physics Letters
Volume102
Issue number21
Publication statusPublished - 2013
Publication categoryResearch
Peer-reviewedYes