Common structure in amorphised compound semiconductors

Research output: Contribution to journalArticle


Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. (C) 2002 Elsevier Science B.V. All rights reserved.


  • MC Ridgway
  • GD Azevedo
  • Chris Glover
  • KM Yu
  • GJ Foran
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Natural Sciences
  • Physical Sciences


  • amorphous compound semiconductors, ion implantation
Original languageEnglish
Pages (from-to)235-239
JournalNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 2003
Publication categoryResearch