Confinement in Thickness-Controlled GaAs Polytype Nanodots.

Research output: Contribution to journalArticle

Abstract

Polytype nanodots are arguably the simplest nanodots than can be made, but their technological control was, up to now, challenging. We have developed a technique to produce nanowires containing exactly one polytype nanodot in GaAs with thickness control. These nanodots have been investigated by photoluminescence, which has been cross-correlated with transmission electron microscopy. We find that short (4-20 nm) zincblende GaAs segments/dots in wurtzite GaAs confine electrons and that the inverse system confines holes. By varying the thickness of the nanodots we find strong quantum confinement effects which allows us to extract the effective mass of the carriers. The holes at the top of the valence band have an effective mass of approximately 0.45 m0 in wurtzite GaAs. The thinnest wurtzite nanodot corresponds to a twin plane in zincblende GaAs and gives efficient photoluminescence. It binds an exciton with a binding energy of roughly 50 meV, including central cell corrections.

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  • Nano Technology
Original languageEnglish
Pages (from-to)2652-2656
JournalNano Letters
Volume15
Issue number4
Publication statusPublished - 2015
Publication categoryResearch
Peer-reviewedYes

Related research output

Neimantas Vainorius, 2017, Solid State Physics, Lund University.

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