Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress

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The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.


  • A Lushchik
  • C Lushchik
  • E Vasil'chenko
  • M Kirm
  • Indrek Martinson
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Physical Sciences
Original languageEnglish
Pages (from-to)299-304
JournalSurface Review and Letters
Issue number1
Publication statusPublished - 2002
Publication categoryResearch