Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress
Research output: Contribution to journal › Article
The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Journal||Surface Review and Letters|
|Publication status||Published - 2002|