Coupling between lateral modes in a vertical resonant tunneling structure

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Abstract

We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector

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Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • quantum dot structure, 4.2 K, vertical resonant tunneling structure, vertical electron transport, laterally constricted resonant tunneling transistor, lateral modes coupling, scattering-matrix approach, Landauer formalism, current-voltage measurements
Original languageEnglish
Pages (from-to)950-953
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
Publication statusPublished - 2002
Publication categoryResearch
Peer-reviewedYes