Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

Research output: Contribution to journalArticle

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Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates. / Dziawa, P.; Sadowski, Janusz; Dluzewski, P.; Lusakowska, E.; Domukhovski, V.; Taliashvili, B.; Wojciechowski, T.; Baczewski, L. T.; Bukala, M.; Galicka, M.; Buczko, R.; Kacman, P.; Story, T.

In: Crystal Growth & Design, Vol. 10, No. 1, 2010, p. 109-113.

Research output: Contribution to journalArticle

Harvard

Dziawa, P, Sadowski, J, Dluzewski, P, Lusakowska, E, Domukhovski, V, Taliashvili, B, Wojciechowski, T, Baczewski, LT, Bukala, M, Galicka, M, Buczko, R, Kacman, P & Story, T 2010, 'Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates', Crystal Growth & Design, vol. 10, no. 1, pp. 109-113. https://doi.org/10.1021/cg900575r

APA

Dziawa, P., Sadowski, J., Dluzewski, P., Lusakowska, E., Domukhovski, V., Taliashvili, B., ... Story, T. (2010). Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates. Crystal Growth & Design, 10(1), 109-113. https://doi.org/10.1021/cg900575r

CBE

Dziawa P, Sadowski J, Dluzewski P, Lusakowska E, Domukhovski V, Taliashvili B, Wojciechowski T, Baczewski LT, Bukala M, Galicka M, Buczko R, Kacman P, Story T. 2010. Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates. Crystal Growth & Design. 10(1):109-113. https://doi.org/10.1021/cg900575r

MLA

Vancouver

Dziawa P, Sadowski J, Dluzewski P, Lusakowska E, Domukhovski V, Taliashvili B et al. Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates. Crystal Growth & Design. 2010;10(1):109-113. https://doi.org/10.1021/cg900575r

Author

Dziawa, P. ; Sadowski, Janusz ; Dluzewski, P. ; Lusakowska, E. ; Domukhovski, V. ; Taliashvili, B. ; Wojciechowski, T. ; Baczewski, L. T. ; Bukala, M. ; Galicka, M. ; Buczko, R. ; Kacman, P. ; Story, T. / Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates. In: Crystal Growth & Design. 2010 ; Vol. 10, No. 1. pp. 109-113.

RIS

TY - JOUR

T1 - Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

AU - Dziawa, P.

AU - Sadowski, Janusz

AU - Dluzewski, P.

AU - Lusakowska, E.

AU - Domukhovski, V.

AU - Taliashvili, B.

AU - Wojciechowski, T.

AU - Baczewski, L. T.

AU - Bukala, M.

AU - Galicka, M.

AU - Buczko, R.

AU - Kacman, P.

AU - Story, T.

PY - 2010

Y1 - 2010

N2 - The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented.

AB - The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented.

U2 - 10.1021/cg900575r

DO - 10.1021/cg900575r

M3 - Article

VL - 10

SP - 109

EP - 113

JO - Crystal Growth and Design

T2 - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 1

ER -