Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ∼ 40% at ∼ 415 × is presented.

Details

Authors
  • L. Barrutia
  • I. García
  • E. Barrigón
  • M. Ochoa
  • I. Lombardero
  • M. Hinojosa
  • P. Caño
  • J. Bautista
  • L. Cifuentes
  • I. Rey-Stolle
  • C. Algora
Organisations
External organisations
  • Technical University of Madrid
  • Swiss Federal Laboratories for Materials Science and Technology
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Energy Systems

Keywords

  • Ge wafers, III-V semiconductors, MOVPE, multijunction solar cell
Original languageEnglish
Title of host publicationProceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
EditorsJavier Mateos, Tomas Gonzalez
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)978-1-5386-5779-9
Publication statusPublished - 2018
Publication categoryResearch
Peer-reviewedYes
Event12th Spanish Conference on Electron Devices, CDE 2018 - Salamanca, Spain
Duration: 2018 Nov 142018 Nov 16

Conference

Conference12th Spanish Conference on Electron Devices, CDE 2018
CountrySpain
CitySalamanca
Period2018/11/142018/11/16