Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires

Research output: Contribution to journalArticle

Abstract

Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations, This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.

Details

Authors
  • Mohammad Montazeri
  • Melodie Fickenscher
  • Leigh M. Smith
  • Howard E. Jackson
  • Jan Yarrison-Rice
  • Jung Hyun Kang
  • Qiang Gao
  • H. Hoe Tan
  • Chennupati Jagadish
  • Yanan Guo
  • Jin Zou
  • Mats-Erik Pistol
  • Craig E. Pryor
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology

Keywords

  • photoluminescence, Strained nanowires, core-shell nanowires, Raman
Original languageEnglish
Pages (from-to)880-886
JournalNano Letters
Volume10
Issue number3
Publication statusPublished - 2010
Publication categoryResearch
Peer-reviewedYes