Directed growth of branched nanowire structures

Research output: Contribution to journalArticle

Standard

Directed growth of branched nanowire structures. / Dick Thelander, Kimberly; Deppert, Knut; Karlsson, Lisa; Larsson, Magnus; Seifert, Werner; Wallenberg, Reine; Samuelson, Lars.

In: MRS Bulletin, Vol. 32, No. 2, 2007, p. 127-133.

Research output: Contribution to journalArticle

Harvard

APA

CBE

MLA

Vancouver

Author

RIS

TY - JOUR

T1 - Directed growth of branched nanowire structures

AU - Dick Thelander, Kimberly

AU - Deppert, Knut

AU - Karlsson, Lisa

AU - Larsson, Magnus

AU - Seifert, Werner

AU - Wallenberg, Reine

AU - Samuelson, Lars

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2007

Y1 - 2007

N2 - We describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and InAs used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.

AB - We describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and InAs used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.

KW - Nanotechnology

KW - semiconductors

KW - crystal structure

KW - Nanowires

KW - electron microscopy

M3 - Article

VL - 32

SP - 127

EP - 133

JO - MRS Bulletin

JF - MRS Bulletin

SN - 1938-1425

IS - 2

ER -