Doping of GaAsP nanowires grown by aerotaxy

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Abstract

Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.

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Subject classification (UKÄ) – MANDATORY

  • Nano Technology
Original languageEnglish
Publication statusPublished - 2019 Jul 1
Publication categoryResearch
Peer-reviewedYes
Event21th International Vacuum Congress: IVC-21 - Malmö, Sweden
Duration: 2019 Jul 12019 Jul 5
https://mkon.nu/IVC21

Conference

Conference21th International Vacuum Congress
Abbreviated titleIVC-21
CountrySweden
CityMalmö
Period2019/07/012019/07/05
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