Double oxidation scheme for tunnel junction fabrication

Research output: Contribution to journalArticle

Abstract

The authors report a method to achieve Al-Al Ox -Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68 fFμ m2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication.

Details

Authors
  • T. Holmqvist
  • M. Meschke
  • J. P. Pekola
External organisations
  • Aalto University
  • Helsinki University of Technology
Original languageEnglish
Pages (from-to)28-31
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number1
Publication statusPublished - 2008
Publication categoryResearch
Peer-reviewedYes
Externally publishedYes