Dynamics of extremely anisotropic etching of InP nanowires by HCl

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Abstract

We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.

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  • Condensed Matter Physics
Original languageEnglish
Pages (from-to)222-224
JournalChemical Physics Letters
Volume502
Issue number4-6
Publication statusPublished - 2011
Publication categoryResearch
Peer-reviewedYes