Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.

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Subject classification (UKÄ) – MANDATORY

  • Nano Technology
Original languageEnglish
Title of host publication 2018 76th Device Research Conference (DRC)
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Pages137-138
Number of pages2
ISBN (Electronic)978-1-5386-3028-0
Publication statusPublished - 2018 Jun 25
Publication categoryResearch
Peer-reviewedNo
Event76th Device Research Conference - University of California Santa Barbara, Santa Barbara, United States
Duration: 2018 Jul 242018 Jul 27

Conference

Conference76th Device Research Conference
CountryUnited States
CitySanta Barbara
Period2018/07/242018/07/27

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