Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Bibtex

@inproceedings{11fd53bb4933400f8e390638a248d761,
title = "Effect of Gate Oxide Defects on Tunnel Transistor RF Performance",
abstract = "Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.",
author = "Markus Hellenbrand and Elvedin Memisevic and Johannes Svensson and Abinaya Krishnaraja and Erik Lind and Lars-Erik Wernersson",
year = "2018",
month = "6",
day = "25",
doi = "10.1109/DRC.2018.8442145",
language = "English",
pages = "137--138",
booktitle = "2018 76th Device Research Conference (DRC)",
publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

}